GT60N321 2002-01-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT60N321 high power switching applications the 4th generation frd included between emitter and collector enhancement-mode high speed igbt : t f = 0.25 s (typ.) (i c = 60 a) frd : t rr = 0.8 s (typ.) (di/dt = ? 20 a/s) low saturation voltage: v ce (sat) = 2.3 v (typ.) (i c = 60 a) maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 1000 v gate-emitter voltage v ges 25 v dc i c 60 collector current 1 ms i cp 120 a dc i ecf 15 emitter-collector forward current 1 ms i ecfp 120 a collector power dissipation (tc 25c) p c 170 w junction temperature t j 150 c storage temperature t stg 55~150 c screw torque 0.8 n ? m equivalent circuit unit: mm jedec D jeita D toshiba 2-21f2c weight: 9.75 g (typ.) emitter collector gate
GT60N321 2002-01-18 2 electrical characteristics (ta 25c) characteristic symbol test condition min typ. max unit gate leakage current i ges v ge 25 v, v ce 0 500 na collector cut-off current i ces v ce 1000 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 60 ma, v ce 5 v 3.0 6.0 v collector-emitter saturation voltage v ce (sat) (1) i c 10 a, v ge 15 v 1.6 2.3 v collector-emitter saturation voltage v ce (sat) (2) i c 60 a, v ge 15 v 2.3 2.8 v input capacitance c ies v ce 10 v, v ge 0, f 1 mhz 4000 pf rise time t r 0.23 turn-on time t on 0.33 fall time t f 0.25 0.40 switching time turn-off time t off 0.70 s emitter-collector forward voltage v ecf i ec 15 a, v ge 0 1.5 2.0 v reverse recovery time t rr i f 15 a, v ge 0, di/dt 20 a/ s 0.8 2.5 s thermal resistance r th(j-c) 0.74 c/w thermal resistance r th(j-c) 4.0 c/w 15 v 15 v 0 51 600 v 10
GT60N321 2002-01-18 3 0 2 4 6 8 0 20 40 60 80 100 25 t c 125c common emitter v ce 5 v 40 05 10 15 20 25 0 2 4 6 8 10 80 60 30 i c 10 a common emitter tc 40c collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 0 5 10 15 20 25 0 2 4 6 8 10 80 60 30 i c 10 a common emitter tc 25c 05 10 15 20 25 0 2 4 6 8 10 80 60 30 i c 10 a common emitter tc 125c 40 0 40 80 120 0 1 2 3 4 80 i c 10 a common emitter v ge 15 v 160 60 30 100 80 60 40 20 0 0 1 2 3 4 5 v ge 7 v 15 v 20 v 25 v 10 v common emitter tc 25c
GT60N321 2002-01-18 4 collector current i c (a) capacitance c (pf) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) ( 10 v) gate-emitter voltage v ge (v) gate resistance r g ( ) switching time ? r g switching time ( s) collector current i c (a) switching time ? i c switching time ( s) collector-emitter voltage v ce (v) c ? v ce collector- emitter voltage v ce (v) safe operating area collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 0 0 4 8 v ce 150 v common emitter r l 2.5 t c 25c 100 v 50 v 12 16 20 50 100 150 200 250 300 350 400 0.1 1 1 10 10 100 1000 common emitter v cc 600 v i c 60 a v gg 15 v t c 25c t of f t on t r t f 0.1 0 1 10 20 60 80 common emitter v cc 600 v r g 51 v gg 15 v t c 25c 40 t of f t on t r t f 10 1 100 1000 10000 10 100 1000 10000 c oes c res c ies common emitter v ge 0 v f 1 mhz t c 25c 1 1 30 100 1000 3000 300 3 5 10 30 50 100 300 t j 125c v ge 15 v r g 10 1 1 i c max (pulsed) * i c ma x (continuous) 10 s * 1 ms * 10 ms * dc operation 100 s * * single non-repetitive pulse tc 25c curves must be derated linearly with increase in temperature. 10 100 1000 10 100 1000 3000
GT60N321 2002-01-18 5 pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) collector-emitter forward voltage v ecf (v) reverse recovery time t rr ( s) emitter-collector forward current i ecf (a) i rr , t rr ? i ecf peak reverse recovery current i rr (a) reverse recovery time t rr ( s) di/dt (a/ s) 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 tc 125c 25 40 ?? 10 9 8 7 6 5 0 20 40 60 80 100 common emitter di/dt 20 a/ s tc 25c 0 0.4 0.8 1.2 1.6 2 i r r t r r i rr , t rr ? di/dt i ecf ? v ecf emitter-collector forward current i ecf (a) common collector 10 3 10 5 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 3 10 2 10 1 10 0 10 1 10 2 igbt stage diode stage tc 25c peak reverse recovery current i rr (a) 50 40 30 20 10 0 0 50 100 150 200 250 common emitter i ecf 60 a tc 25c 0 0.2 0.4 0.6 0.8 1 t r r
GT60N321 2002-01-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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